This post explains for the MOSFET PA110BDA.
The Part Number is PA110BDA.
Mosfet 100v 50a
The Package is TO-252 Type
Nch 100V 20A Power MOSFET Avalanche current IAR.3 10 A PD 20 W Power dissipation Tc = 25°C Ta = 25°C PD 0.85 W EAS.3 14.6 mJ Gate - Source voltage Avalanche energy, single pulse 80 A VGSS 20 V Continuous drain current Tc = 25°C Tc = 100°C Pulsed drain current ID,pulse.2 ID.1 20 A ID.1 10 A Drain - Source voltage VDSS 100 V. Infineon is the market leader in highly efficient solutions for power generation, power supply and power consumption. The latest generation of Infineon’s MOSFET transistors were designed to ensure market leading performance, improve efficiency and to achieve better thermals in terms of the state of the art EMI behavior.
The function of this transistor is Silicon N -hannel MOS Type Transistor.
Manufacturers : UNIKC Semiconductor
Image
Description : Silicon N Channel MOS Type Field Effect Transistor
Absolute Maximum Ratings (Tc = 25°C)
1. Drain to source voltage : VDSS = 100 V
2. Gate to source voltage : VGSS = ± 20 V
3. Drain current : ID = 15 A
4. Drain power dissipation : PD =50 W
5. Single pulse avalanche energy : Eas = 14.8 mJ
6. Avalanche current : Iar = 5.4 A
7. Channel temperature : Tch = 150 °C
8. Storage temperature : Tstg = -55 to +150 °C
Pinout
PA110BDA PDF Datasheet
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